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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Clipper Circuit01:18

Clipper Circuit

A clipper circuit is a fundamental wave-shaping device that harnesses the unique properties of diodes to alter and control waveform characteristics. This technology is widely used in electronic devices, especially in television and radar communication systems, where it enhances waveform modulation in both transmitters and receivers.
The operation of a clipper circuit can be exemplified by analyzing a dual-clipper configuration setup that integrates two ideal diodes, each paired with a biasing...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: May 30, 2026

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

Semiconductor device as optical demultiplexer for short range optical communications.

P Louro1, M Vieira, M Fernandes

  • 1DEETC-ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal.

Journal of Nanoscience and Nanotechnology
|July 21, 2011
PubMed
Summary

This study introduces a novel multilayered amorphous silicon carbide heterostructure device for wavelength-division demultiplexing (WDM) in visible light. The device successfully separates and recovers optical signals across different wavelengths, showing promise for optical communications.

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Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping
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Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping

Published on: March 20, 2017

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Last Updated: May 30, 2026

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping
09:43

Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping

Published on: March 20, 2017

Area of Science:

  • Optoelectronics
  • Materials Science
  • Photonics

Background:

  • Wavelength-division multiplexing (WDM) is crucial for increasing optical communication capacity.
  • Developing compact and efficient WDM devices for the visible spectrum is an ongoing challenge.

Purpose of the Study:

  • To present a novel multilayered a-SiC:H heterostructure for visible light WDM applications.
  • To characterize the optoelectronic properties and demonstrate the WDM functionality of the proposed device.

Main Methods:

  • Fabrication of a stacked p-i-n photodiode heterostructure with tailored absorption regions.
  • Optoelectronic characterization across the visible spectrum.
  • Demonstration of WDM functionality using three distinct wavelength channels.

Main Results:

  • The a-SiC:H heterostructure device exhibited successful wavelength-division demultiplexing.
  • Input channels were recovered by analyzing photo-current spectral dependence on applied voltage.
  • An electrical model was proposed and validated through circuit equation solutions.

Conclusions:

  • The multilayered a-SiC:H heterostructure is a viable device for visible light WDM.
  • The device shows potential for short-range optical communication systems.
  • Further applications beyond optical communications are anticipated.