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The effect of substrate type on SiC nanowire orientation
Giovanni Attolini1, Francesca Rossi, Matteo Bosi
1IMEM-CNR Institute, Parco Area delle Scienze 37A, 43124 Parma, Italy.
Journal of Nanoscience and Nanotechnology
|July 26, 2011
Summary
This study synthesized beta-silicon carbide (SiC) nanowires on various substrates using Chemical Vapor Deposition. The nanowires consistently grew in the 3C-SiC polytype along the (111) direction, with reduced stacking faults on 3C-SiC substrates.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Silicon carbide (SiC) is a crucial semiconductor material with diverse applications.
- Controlling the growth and structure of SiC nanowires is essential for advanced electronic and optoelectronic devices.
- The vapor-liquid-solid (VLS) mechanism is a common method for nanowire synthesis.
Purpose of the Study:
- To synthesize beta-SiC nanowires on various monocrystalline substrates.
- To investigate the influence of different substrates on SiC nanowire growth and structure.
- To characterize the crystal structure, alignment, and catalyst formation of the synthesized nanowires.
Main Methods:
- Chemical Vapor Deposition (CVD) at atmospheric pressure and 1100°C.
- Use of silane and propane precursors diluted in hydrogen.
- Nickel catalyst dewetting for VLS growth.
- Characterization using X-ray diffraction (XRD), High Resolution Transmission Electron Microscopy (HRTEM), Scanning Electron Microscopy (SEM), High Angle Annular Dark Field (HAADF) imaging, and Energy Dispersive X-Ray (EDX) spectroscopy.
Main Results:
- Beta-SiC nanowires were successfully synthesized on Si (001), Si (111), 3C-SiC (001), 4H-SiC (0001), and 6H-SiC (0001) substrates.
- All synthesized nanowires exhibited the 3C-SiC polytype structure, growing along the (111) direction, regardless of the substrate.
- (111) stacking faults were observed, with a reduction noted for nanowires grown on 3C-SiC substrates.
- Growth on (111) oriented substrates resulted in good vertical alignment of the nanowires.
- Analysis of the catalyst particles revealed the formation of a nickel-silicon alloy.
Conclusions:
- The synthesis method yields 3C-SiC nanowires with a consistent crystal structure and growth direction.
- The choice of substrate influences the density of stacking faults and the vertical alignment of SiC nanowires.
- Understanding these growth dynamics is key for optimizing SiC nanowire fabrication for specific applications.
