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Quantum critical transport near the Mott transition
H Terletska1, J Vučičević, D Tanasković
1Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306, USA.
Physical Review Letters
|July 30, 2011
Summary
This study reveals quantum critical scaling in the Hubbard model
Area of Science:
- Condensed matter physics
- Quantum mechanics
- Materials science
Background:
- The half-filled one-band Hubbard model describes strongly correlated electron systems.
- Understanding transport properties near metal-insulator transitions is crucial.
Purpose of the Study:
- To systematically investigate incoherent transport in the high-temperature crossover region.
- To identify scaling behaviors and underlying mechanisms.
Main Methods:
- Theoretical analysis of the one-band Hubbard model.
- Examination of resistivity curves and the beta function.
Main Results:
- Observed quantum critical scaling of resistivity: ρ(T, δU) = ρ(c)(T)f(T/T₀(δU)).
- Identified scaling relations T₀(δU) ~ |δU|(zν) and ρ(c)(T) ~ T.
- Found a strong coupling form for the beta function with mirror symmetry.
Conclusions:
- Mott quantum criticality may explain unusual transport phenomena near metal-insulator transitions.
- The observed scaling behavior mirrors experimental findings in various systems.
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