Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Text Mining of CVD Synthesis Recipes for 2D Materials.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Electrostatic-repulsion-based transfer of van der Waals materials.

Nature·2025
Same author

Remote-Contact Catalysis for Target-Diameter Semiconducting Carbon Nanotube Arrays.

Journal of the American Chemical Society·2024
Same author

A Highly Linear Ultra-Low-Area-and-Power CMOS Voltage-Controlled Oscillator for Autonomous Microsystems.

Micromachines·2024
Same author

Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition.

Nano letters·2024
Same author

Highly Confined Hybridized Polaritons in Scalable van der Waals Heterostructure Resonators.

ACS nano·2024
Same journal

Near-exceptional point degeneracy enables multilevel optical memory.

Nature nanotechnology·2026
Same journal

Monolithic manufacturing of an electrically addressable quasi-suspended nanophotonic aperture.

Nature nanotechnology·2026
Same journal

Halide-site-substituting spacer creates quasi-two-dimensional perovskites for vapour-deposited light-emitting diodes.

Nature nanotechnology·2026
Same journal

Nanoscale amorphization of poly(triarylamine) for efficient and stable inverted perovskite photovoltaics.

Nature nanotechnology·2026
Same journal

Bridging nanotechnology and mechanobiology.

Nature nanotechnology·2026
Same journal

Coherent 2D/3D van der Waals epitaxy enables single-crystal perovskite heterostructures.

Nature nanotechnology·2026
See all related articles

Related Experiment Video

Updated: May 30, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Graphene electronics: thinking outside the silicon box

Tomás Palacios

    Nature Nanotechnology
    |August 5, 2011
    PubMed
    Summary

    No abstract available in PubMed .

    More Related Videos

    Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
    14:52

    Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

    Published on: September 23, 2018

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
    07:51

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

    Published on: February 1, 2022

    Related Experiment Videos

    Last Updated: May 30, 2026

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
    07:12

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

    Published on: August 28, 2018

    Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
    14:52

    Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

    Published on: September 23, 2018

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
    07:51

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

    Published on: February 1, 2022