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Updated: Jan 17, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Electrostatic-repulsion-based transfer of van der Waals materials.

Xudong Zheng1, Jiangtao Wang2, Jianfeng Jiang3

  • 1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA. xudongz@mit.edu.

Nature
|September 24, 2025
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Summary

We developed a novel, etching-free transfer technique for van der Waals (vdW) materials. This method enables high-yield, large-scale fabrication of advanced 2D electronics for 3D integration and energy-efficient computing.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Van der Waals (vdW) materials enable 3D integration for higher-density transistors and energy-efficient computing.
  • Current synthesis methods require high thermal budgets and specialized substrates, necessitating advanced transfer techniques.
  • Existing transfer methods often compromise on key industrial requirements like intactness, cleanliness, speed, scale, cost, or versatility.

Purpose of the Study:

  • To develop a comprehensive and systematic solution for transferring vdW materials that meets diverse industrial demands.
  • To demonstrate an advanced, etching-free transfer technique for vdW materials.
  • To enable high-performance 2D field-effect transistors (FETs) and facilitate 3D integration.

Main Methods:

  • Developed an electrostatic-repulsion-enabled advanced transfer technique.
  • Utilized an ammonia solution compatible with complementary metal-oxide-semiconductor (CMOS) processes.
  • Integrated bismuth contacts for enhanced device performance.

Main Results:

  • Achieved an etching-free, high-yield, fast, wafer-scale, and low-cost transfer method.
  • Demonstrated superior 2D FET performance with 100% yield, near-zero hysteresis (7 mV), and near-ideal subthreshold swing (65.9 mV/dec).
  • Enabled an ultrahigh on-current of 1.3 mA/μm with bismuth contacts under 1 V bias.

Conclusions:

  • The developed transfer technique offers a facile and manufacturing-viable solution for vdW-materials-based electronics.
  • This approach overcomes limitations of previous transfer methods, providing a comprehensive solution.
  • Paves the way for advanced 3D integration of electronic devices using vdW materials.