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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Self-aligned coupled nanowire transistor.

Tero S Kulmala1, Alan Colli, Andrea Fasoli

  • 1Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.

ACS Nano
|August 6, 2011
PubMed
Summary
This summary is machine-generated.

Researchers fabricated a novel coupled nanowire transistor by integrating two field-effect transistors. This device enables on-chip signal processing and shows potential for analogue computation applications.

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Area of Science:

  • Nanoelectronics
  • Solid State Physics
  • Materials Science

Background:

  • Advancements in nanoelectronics aim to enhance computational power and signal processing capabilities.
  • Integrating multiple functions into single nanoelectronic components is a key research direction.

Purpose of the Study:

  • To report the fabrication of a coupled nanowire transistor with integrated signal processing.
  • To explore its potential for analogue computation.

Main Methods:

  • Fabrication of a device comprising two superimposed nanowire field-effect transistors (FETs).
  • Utilizing a self-aligned process for device fabrication from a single nanowire.
  • Characterization of the coupled nanowire transistor's circuit behavior.

Main Results:

  • Successful fabrication of a coupled nanowire transistor forming a thyristor-like circuit.
  • Demonstration of mutual interaction between the two integrated FETs.
  • Observation of embedded internal signal processing capabilities.

Conclusions:

  • The coupled nanowire transistor offers a pathway to enhanced computational power.
  • The device shows significant promise for analogue computation applications.
  • The self-aligned fabrication process simplifies the integration of complex functionalities.