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Updated: May 30, 2026
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Fabrication and characterization of Si quantum dots and SiO(2) tunnel barriers grown by a controlled oxidation
Sutikno Bin Madnasri1, Uda Hashim, Zul Azhar Zahid Jamal
1Physics Department, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang (UNNES), Gunung Pati, Semarang, 50229, Republic of Indonesia.
Abstract:
The control of the growth of silicon dioxide (SiO(2)) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using a systematic oxidation technique known as the pattern-dependent oxidation (PADOX) process. For comparison, two oxidation processes using conventional furnace and rapid thermal processing (RTP) were used. The oxidation temperature for both oxidation processes was set at 1000 °C and the oxygen flow rate in the furnace was set at 1 l min(-1). The nanostructures were characterized using AFM, SEM and TEM to determine the quality and the stoichiometry of the Si QDs and the oxides. The oxidation rate using a furnace is 0.36 nm s(-1), significantly lower than the RTP value which is 2.16 nm s(-1). Meanwhile, the oxygen contents in SiO(2) grown by furnace and RTP are approximately the same.
