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Unintentional conductivity of indium nitride: transport modelling and microscopic origins
P D C King1, T D Veal, C F McConville
1Department of Physics, University of Warwick, Coventry CV4 7AL, UK.
Abstract:
A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
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