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Updated: May 30, 2026

08:58
Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Low temperature magnetoresistance measurements on bismuth nanowire arrays
Ch Kaiser1, G Weiss, T W Cornelius
1Physikalisches Institut, Universität Karlsruhe, D-76128 Karlsruhe, Germany.
Abstract:
We present low temperature resistance R(T) and magnetoresistance measurements for Bi nanowires with diameters between 100 and 500 nm, which are close to being single-crystalline. The nanowires were fabricated by electrochemical deposition in pores of polycarbonate membranes. R(T) varies as T(2) in the low temperature range 1.5 K

