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Device fabrication with solid-liquid-solid grown silicon nanowires
Eun Kyung Lee1, Byoung Lyong Choi, Yong Dae Park
1Display Device and Processing Lab, Samsung Advanced Institute of Technology, Youngin, Kyunggi-Do, 449-712, Korea.
Nanotechnology
|August 10, 2011
Summary
High-quality silicon nanowires were grown using a solid-liquid-solid (SLS) mechanism. Nanowire diameter depends on temperature, not catalyst, and doping is possible without external sources.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Single-crystal silicon nanowires are crucial for advanced electronic devices.
- Existing growth methods often face challenges in controlling nanowire characteristics.
- The solid-liquid-solid (SLS) mechanism offers a potential route for controlled nanowire synthesis.
Purpose of the Study:
- To investigate the growth of high-quality silicon nanowires using the SLS mechanism.
- To understand the influence of growth parameters on nanowire properties.
- To demonstrate the feasibility of in-situ doping during SLS growth.
Main Methods:
- Silicon wafers were used as a source material with a nickel catalyst.
- The solid-liquid-solid (SLS) growth mechanism was employed at 1000°C.
- Characterization involved analyzing nanowire diameter, oxide layer thickness, and electrical properties via a field-effect transistor.
Main Results:
- High-quality, single-crystal silicon nanowires with a 10 nm core and 20-30 nm oxide layer were successfully grown.
- Nanowire diameter was found to be solely dependent on growth temperature, independent of catalyst size or shape.
- The study demonstrated the possibility of doping silicon nanowires during SLS growth without external dopants.
Conclusions:
- The SLS mechanism provides a controllable method for synthesizing silicon nanowires.
- Nanowire characteristics are tunable via growth temperature and substrate properties.
- In-situ doping capability opens avenues for fabricating functional nanowire-based devices.
