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Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties
O V Naumova1, Yu V Nastaushev, S N Svitasheva
1Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia.
Nanotechnology
|August 10, 2011
Summary
Researchers characterized nanowhisker structures grown on silicon substrates using molecular-beam epitaxy. The study revealed optical inhomogeneity and a Schottky barrier, indicating unique electrical properties of these nanowhiskers.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Silicon nanowhiskers are promising for electronic applications.
- Controlled growth of nanowhiskers is crucial for device fabrication.
Purpose of the Study:
- To characterize nanowhisker structures grown by molecular-beam epitaxy on Si(111) substrates.
- To investigate the structural, optical, and electrical properties of these nanowhiskers.
Main Methods:
- Scanning electron microscopy (SEM) for structural analysis.
- Spectroscopic ellipsometry for optical properties.
- Current-voltage and current-temperature measurements for electrical characterization.
Main Results:
- Nanowhiskers with diameters of 70-200 nm and lengths of 580-890 nm were successfully grown.
- Spectroscopic ellipsometry revealed lateral optical inhomogeneity and properties differing from single-crystal silicon.
- Electrical measurements indicated a Schottky barrier (0.70 eV) and non-uniform distribution of electrically active centers.
Conclusions:
- The grown nanowhiskers inherit the (111) orientation of the Si substrate.
- The optical and electrical properties suggest potential for novel device applications.
- Further research is needed to optimize growth and understand the non-uniform electrical properties.
