Related Experiment Video
Updated: May 30, 2026
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A comparative study of CCl(4) reactions on Ag and Si surfaces by in situ ultraviolet photoemission electron
Abstract:
The reactivity of a bulk Ag surface, an Ag monolayer film on Si(111)- 7 × 7 (denoted as the [Formula: see text]-Ag-Si surface), and Si(111)-7 × 7 to CCl(4) was investigated by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission electron microscopy (UV-PEEM). In situ UV-PEEM was used to monitor simultaneously the CCl(4) dissociation on different surface domains, including the bulk Ag, [Formula: see text]-Ag-Si, and Si(111). The PEEM results combined with XPS data show that CCl(4) adsorbs dissociatively on bulk Ag(111) and Si(111) but adsorbs molecularly on the [Formula: see text]-Ag-Si surface, and the surface reactivity follows the order of [Formula: see text]-Ag-Si.
