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Raman Spectroscopy Instrumentation: Overview
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Resonance and Hybrid Structures
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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
1Institute of Semiconductor Physics, Siberian Brunch of RAS, 630090 Novosibirsk, Lavrentyeva 13, Russia.
We investigated Germanium quantum dots (QDs) in a Silicon matrix, observing altered Raman resonance due to strain and quantum effects. This research enhances understanding of quantum dot properties for future applications.
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