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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

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Acoustic charge transport in GaN nanowires

J Ebbecke1, S Maisch, A Wixforth

  • 1Experimentalphysik I, Institut für Physik der Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany. School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh,EH14 4AS, UK.

Nanotechnology
|August 11, 2011
PubMed

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