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Updated: May 30, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
CMOS considerations in nanoelectromechanical carbon nanotube-based switches
M Y A Yousif1, P Lundgren, F Ghavanini
1Micro- and Nanosystems Group, BioNano Systems Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Gothenburg, Sweden.
Abstract:
In this paper, we focus on critical issues directly related to the viability of carbon nanotube-based nanoelectromechanical switches, to perform their intended functionality as logic and memory elements, through assessment of typical performance parameters with reference to complementary metal-oxide-semiconductor devices. A detailed analysis of performance metrics regarding threshold voltage control, static and dynamic power dissipation, speed, and integration density is presented. Apart from packaging and reliability issues, these switches seem to be competitive in low power, particularly low-standby power, logic and memory applications.
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