Related Experiment Video
Updated: May 30, 2026
05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Conductance oscillations in a nanowire double junction.
1Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Hong Kong SAR, People's Republic of China.
Nanotechnology
|August 12, 2011
Summary
Interactions in double nanowire junctions cause conductance oscillations due to electron wave interference. Understanding these interactions is crucial for designing effective nanowire devices.
Area of Science:
- Condensed Matter Physics
- Nanotechnology
- Quantum Transport
Background:
- Nanowire devices offer potential for advanced electronics.
- Understanding electron transport at junctions is key to device performance.
- Interactions between multiple junctions require detailed investigation.
Purpose of the Study:
- To investigate the interaction between two nanowire cross-junctions.
- To analyze the dc conductances in a three-wire double-junction structure.
- To understand the origin of conductance oscillations in such systems.
Main Methods:
- Utilized the modular Green's function approach to calculate dc conductances.
- Analyzed electron wave interference between junctions.
- Developed a phenomenological expression for oscillation peak positions.
Main Results:
- Observed significant oscillations in inter-wire conductances.
- Attributed oscillations to interference of reflected electron waves.
- Found negligible interaction between quasi-bound states at junctions.
Conclusions:
- Electron wave interference is the primary driver of conductance oscillations.
- A model was developed to describe oscillation peak spacing.
- Neighboring junction interactions must be considered in nanowire device design.
Related Concept Videos
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:30Oscillations In An LC Circuit
An idealized LC circuit of zero resistance can oscillate without any source of emf by shifting the energy stored in the circuit between the electric and magnetic fields. In such an LC circuit, if the capacitor contains a charge q before the switch is closed, then all the energy of the circuit is initially stored in the electric field of the capacitor. This energy is given by
01:27Magnetic Field Due To A Thin Straight Wire
Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
01:18Magnetic Field Due to Two Straight Wires
Consider two parallel straight wires carrying a current of 10 A and 20 A in the same direction and separated by a distance of 20 cm. Calculate the magnetic field at a point "P2", midway between the wires. Also, evaluate the magnetic field when the direction of the current is reversed in the second wire.
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:11P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...