Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures

We discuss the molecular beam epitaxy (MBE) growth methods of emission wavelength control and property investigations for different types of InAs/(In)GaAsN/GaAs heterostructures containing InGaAsN quantum-size layers: (1) InGaAsN quantum wells deposited by the conventional mode in a GaAs matrix, (2) InAs quantum dots deposited in a GaAsN matrix or covered by an InGaAs(N) layer, and (3) InAs/InGaAsN/GaAsN strain-compensated superlattices with quantum wells and quantum dots. The structures under investigation have demonstrated photoluminescence emission in a wavelength range of ∼1.3-1.8 µm at room temperature without essential deterioration of the radiative properties.