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Nonvolatile memory device using gold nanoparticles covalently bound to reduced graphene oxide
Peng Cui1, Sohyeon Seo, Junghyun Lee
1Department of Chemistry, National Creative Research Initiative, Center for Smart Molecular Memory, Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-Dong, Jangan-Gu, Suwon, Gyeonggi-Do 440-746, Republic of Korea.
ACS Nano
|August 17, 2011
Summary
New nonvolatile memory devices utilize gold nanoparticles (AuNPs) and reduced graphene oxide (rGO) for stable, long-retention data storage. These advanced AuNP-frGO devices demonstrate reliable performance in both horizontal and vertical configurations.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Development of advanced nonvolatile memory devices is crucial for next-generation electronics.
- Gold nanoparticles (AuNPs) and reduced graphene oxide (rGO) offer unique electronic properties for memory applications.
Purpose of the Study:
- To fabricate and characterize nonvolatile memory devices using gold nanoparticles (AuNPs) and reduced graphene oxide (rGO).
- To investigate the performance of both horizontal and vertical device structures.
- To understand the charging effects and bonding mechanisms within the AuNP-rGO interface.
Main Methods:
- Fabrication of horizontal and vertical memory devices using spin-casting and self-assembly techniques.
- Synthesis and utilization of a novel π-conjugated molecular linker (4-mercapto-benzenediazonium tetrafluoroborate - MBDT) for AuNP-rGO covalent bonding.
- Characterization of covalent bonds using X-ray Photoelectron Spectroscopy (XPS).
- Evaluation of current-voltage characteristics, hysteresis, cycling stability, and data retention.
Main Results:
- Successfully fabricated AuNP-frGO memory devices in both horizontal and vertical architectures.
- Observed nonlinear hysteresis, stable write-multiple read-erase-multiple read cycles (>1000 s), and long retention times (>700 s).
- Vertical devices exhibited a large current ON/OFF ratio and enhanced stability.
Conclusions:
- The developed AuNP-frGO memory devices demonstrate promising nonvolatile memory characteristics.
- The novel MBDT linker effectively facilitates covalent bonding between AuNPs and rGO, enhancing device performance.
- Vertical device configuration shows superior performance, indicating potential for high-density memory applications.
