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Related Experiment Video

Updated: May 30, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Published on: September 14, 2018

Sub-10 nm patterning using EUV interference lithography.

Birgit Päivänranta¹, Andreas Langner, Eugenie Kirk

¹Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland. birgit.paivanranta@psi.ch

|August 20, 2011

Summary

This summary is machine-generated.

Extreme ultraviolet (EUV) interference lithography achieves sub-10 nm nanopatterning resolution. Optimized molybdenum gratings and efficient phase masks set new records for photon-based lithography.

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Published on: February 12, 2017

Area of Science:

Nanotechnology
Optical Engineering
Materials Science

Background:

Extreme ultraviolet (EUV) lithography is the leading technology for manufacturing integrated circuits below 20 nm.
EUV interference lithography offers a powerful research tool for nanoscale patterning.

Purpose of the Study:

To demonstrate nanopatterning with sub-10 nm resolution using EUV interference lithography.
To evaluate the performance of optimized molybdenum gratings and efficient phase masks.

Main Methods:

Utilizing EUV interference lithography with interference transmission gratings.
Employing highly efficient and optimized molybdenum gratings.
Evaluating phase masks for zeroth-order diffraction suppression.

Main Results:

Achieved resolved line/space patterns down to 8 nm half-pitch.
Demonstrated pattern modulation down to 6 nm half-pitch.
Evaluated a phase mask enabling 50 nm line/space patterns over large areas.

Conclusions:

EUV interference lithography demonstrates sub-10 nm patterning performance, a record for photon-based methods.
Optimized gratings and phase masks are crucial for high-resolution nanopatterning.
Efficient phase masks facilitate the development of table-top EUV interference lithography systems.