Related Experiment Video
Updated: May 29, 2026

10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
High voltage pulse shaping of e-beam diode using perveance variation.
1Accelerator & Pulsed Power Division, Bhabha Atomic Research Centre, Trombay, Mumbai, India. sabyam@barc.gov.in
The Review of Scientific Instruments
|September 8, 2011
Summary
A novel high voltage pulse shaping method uses electron-beam diode characteristics to create square pulses from Marx generators. This eliminates the need for additional pulse shaping components in pulsed power applications.
Area of Science:
- Pulsed power technology
- High voltage engineering
- Plasma physics
Background:
- Pulsed power systems require precise voltage pulse control for applications like electron-beam diodes.
- Traditional pulse shaping methods often involve complex and bulky external circuitry.
- Electron-beam diodes exhibit non-linear, time-varying perveance that influences output characteristics.
Purpose of the Study:
- To introduce a new methodology for shaping high voltage pulses for pulsed power applications.
- To generate high voltage square pulses across the anode-cathode gap of electron-beam diodes.
- To investigate the potential of inherent diode characteristics for pulse shaping.
Main Methods:
- Utilizing the non-linear, time-varying perveance of electron-beam diodes for pulse shaping.
- Analyzing the output pulse generated directly from a Marx generator feeding an e-beam diode.
- Developing an analytical model to predict square-like pulse generation under specific conditions.
Main Results:
- Analytical demonstration that a Marx generator feeding an e-beam diode can produce a square-like output pulse.
- Experimental validation of the analytical findings, confirming the feasibility of the proposed method.
- Successful generation of high voltage square pulses without external pulse shaping circuits.
Conclusions:
- The inherent characteristics of electron-beam diodes can be effectively leveraged for high voltage pulse shaping.
- A Marx generator coupled with an e-beam diode offers a simplified approach to generating square-like voltage pulses.
- This methodology presents a promising, potentially more efficient, solution for pulsed power applications.
More Related Videos
Related Concept Videos
Schottky Barrier Diode
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Clipper Circuit
A clipper circuit is a fundamental wave-shaping device that harnesses the unique properties of diodes to alter and control waveform characteristics. This technology is widely used in electronic devices, especially in television and radar communication systems, where it enhances waveform modulation in both transmitters and receivers.
The operation of a clipper circuit can be exemplified by analyzing a dual-clipper configuration setup that integrates two ideal diodes, each paired with a biasing...
The operation of a clipper circuit can be exemplified by analyzing a dual-clipper configuration setup that integrates two ideal diodes, each paired with a biasing...
Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Bridge rectifier
The bridge rectifier is essential in electronics for efficiently converting alternating current (AC) to direct current (DC). Comprised of four diodes configured in a bridge layout, this rectifier effectively processes both the positive and negative halves of the AC waveform, making it superior to half-wave and full-wave center-tapped rectifiers in terms of voltage regulation and output stability.
Operationally, the bridge rectifier allows current flow through two of its diodes during each...
Operationally, the bridge rectifier allows current flow through two of its diodes during each...
Diode: Reverse bias
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Modeling of Diode Forward Characteristics
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

