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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: May 29, 2026

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Published on: July 2, 2012

Novel silicon nanohemisphere-array solar cells with enhanced performance

Yali Li¹, Hongyu Yu, Junshuai Li

¹School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

Small (Weinheim an Der Bergstrasse, Germany)

|September 8, 2011

Summary

No abstract available in PubMed .

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