High-yield production and transfer of graphene flakes obtained by anodic bonding

We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 μm and a few tens of flakes with larger size. About 60-70% of the flakes have a negligible D peak. We show that it is possible to easily transfer the flakes by the wedging technique. The transfer on silicon does not damage graphene and lowers the doping. The charge mobility of the transferred flakes on silicon is on the order of 6000 cm(2)/V s (at a carrier concentration of 10(12) cm(-2)), which is typical for devices prepared on this substrate with exfoliated graphene.