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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Mobility-dependent low-frequency noise in graphene field-effect transistors.

Yan Zhang1, Emilio E Mendez, Xu Du

  • 1Department of Physics and Astronomy, State University of New York at Stony Brook, Stony Brook, New York 11794-3800, United States.

ACS Nano
|September 15, 2011
PubMed
Summary

Low-frequency 1/f noise in graphene transistors depends on carrier mobility. Suspended graphene shows lower noise due to higher mobility, offering potential for advanced electronic materials.

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