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All-semiconductor active plasmonic system in mid-infrared wavelengths.
1School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA.
Optics Express
|September 22, 2011
Summary
This study introduces semiconductor-based plasmonics using Indium Arsenide (InAs) heterostructures for mid-infrared applications. InAs offers superior performance over metals with reduced loss and enhanced tunability, enabling integrated active plasmonic systems.
Area of Science:
- Materials Science
- Optics
- Nanotechnology
Background:
- Metal-based plasmonics faces limitations like high loss and fabrication challenges.
- Mid-infrared (MIR) applications require advanced plasmonic materials.
Purpose of the Study:
- To propose and investigate an all-semiconductor plasmonics approach for the MIR range.
- To demonstrate the advantages of Indium Arsenide (InAs) heterostructures over traditional metal plasmonics.
- To develop a monolithic, integrated active plasmonic system on a chip.
Main Methods:
- Theoretical investigation and simulation of InAs heterostructures for plasmonic properties.
- Analysis of plasmonic performance metrics including loss, confinement, and tunability.
- Design and conceptualization of a monolithic integrated system using epitaxial growth.
Main Results:
- InAs heterostructures exhibit the shortest plasmon wavelength among common semiconductors.
- InAs-based plasmonics show significantly reduced loss and improved light confinement compared to metals.
- Resonant wavelengths are highly tunable via carrier density modulation.
- A monolithic all-semiconductor system integrating source, waveguide, and detector is proposed.
Conclusions:
- InAs heterostructures represent a promising platform for advanced MIR plasmonics.
- Semiconductor plasmonics offer a viable, potentially superior alternative to metal-based approaches.
- The proposed integrated system paves the way for on-chip active plasmonic and metamaterial devices.
