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Updated: May 29, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Atomic force microscopy based tunable local anodic oxidation of graphene
Satoru Masubuchi1, Miho Arai, Tomoki Machida
1Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. msatoru@iis.u-tokyo.ac.jp
Abstract:
We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever V(tip). For G/GO/G junctions fabricated with large and small |V(tip)|. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography can be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO.

