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Related Concept Videos

Atomic Force Microscopy01:08

Atomic Force Microscopy

Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Atomic force microscopy based tunable local anodic oxidation of graphene.

Satoru Masubuchi1, Miho Arai, Tomoki Machida

  • 1Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. msatoru@iis.u-tokyo.ac.jp

Nano Letters
|September 24, 2011
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Summary

We fabricated graphene/graphene oxide/graphene junctions using atomic force microscopy. Local anodic oxidation lithography allowed tuning graphene oxide

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Science

Background:

  • Graphene oxide (GO) is a tunable material with potential electronic applications.
  • Controlling the oxidation level of GO is crucial for its electronic properties.

Purpose of the Study:

  • To fabricate graphene/graphene oxide/graphene (G/GO/G) junctions.
  • To investigate the effect of local anodic oxidation lithography on GO properties.
  • To achieve tunable electronic properties in GO.

Main Methods:

  • Fabrication of G/GO/G junctions using local anodic oxidation lithography (LAO) with atomic force microscopy (AFM).
  • Varied the bias voltage applied to the AFM cantilever (V(tip)) during oxidation.
  • Characterized the conductance of the G/GO/G junctions.

Main Results:

  • The conductance of G/GO/G junctions decreased with increasing bias voltage (V(tip)).
  • G/GO/G junctions fabricated with large |V(tip)| exhibited semi-insulating GO.
  • G/GO/G junctions fabricated with small |V(tip)| exhibited semiconducting GO.

Conclusions:

  • AFM-based LAO lithography enables precise control over graphene oxidation levels.
  • This method allows for tunable electronic properties of GO, ranging from semiconducting to semi-insulating.
  • The fabricated G/GO/G junctions demonstrate potential for electronic device applications.