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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

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A compact model for early electromigration failures of copper dual-damascene interconnects

R L de Orio1, H Ceric, S Selberherr

  • 1Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.

Microelectronics and Reliability
|October 4, 2011
PubMed

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