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Related Experiment Video

Updated: May 28, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Method for electrical characterization of nanowires.

Ron Gurwitz1, Ilan Shalish

  • 1Department of Electrical Engineering, Ben Gurion University of the Negev, Israel.

Nanotechnology
|October 6, 2011
PubMed
Summary

A new method using resistivity and photovoltage measurements effectively assesses carrier concentration and mobility in semiconductor nanostructures. This technique quanties surface states and band bending, overcoming limitations of traditional methods for nanowires.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Surface states in semiconductor nanostructures impede conductivity by trapping charge carriers.
  • Traditional methods like the Hall effect and field-effect transistors are geometrically limited for nanowire analysis.
  • Accurate measurement of carrier concentration and mobility is crucial for controlling nanostructure conductivity.

Purpose of the Study:

  • To develop a reliable method for measuring carrier concentration and mobility in nanowires.
  • To quantify surface state density and surface band bending in semiconductor nanostructures.
  • To investigate the impact of surface states on nanowire electrical properties and size dependence.

Main Methods:

  • Combined resistivity and photovoltage measurements with chemical surface perturbation.

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Related Experiment Videos

Last Updated: May 28, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

  • Application to Chemical Vapor Deposition (CVD) grown Gallium Nitride (GaN) nanowires before and after HCl etching.
  • Characterization using Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectrometry (XPS).

    • Main Results:

    • HCl etching effectively removes native gallium oxide and reduces surface state density from 1 x 10^12 to 5.3 x 10^11 cm^-2.
    • Surface band bending decreased from 0.53 to 0.29 eV after etching.
    • Carrier concentration and mobility values obtained were significantly different from those measured by field-effect transistors, with mobility size dependence vanishing post-etching.

    Conclusions:

    • The proposed method provides a reliable way to measure electrical properties and surface characteristics of nanowires.
    • Surface states significantly influence the electrical properties and size dependence of nanowire mobility.
    • Chemical treatment can be used to mitigate the detrimental effects of surface states on nanowire conductivity.