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X-ray Beam Induced Current Measurements for Multi-Modal X-ray Microscopy of Solar Cells
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X-ray beam induced current method at the laboratory x-ray source.

R R Fahrtdinov1, O V Feklisova, M V Grigoriev

  • 1Institution of Russian Academy of Sciences, Institute of Microelectronics Technology, and High-Purity Materials RAS, Chernogolovka 142432 Russia.

The Review of Scientific Instruments
|October 7, 2011
PubMed
Summary
This summary is machine-generated.

The x-ray beam induced current (XBIC) method effectively images silicon grain boundaries using a laboratory X-ray source and polycapillary optics. This technique shows promise for material analysis and defect characterization.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Analytical Techniques

Background:

  • Characterizing grain boundaries in silicon is crucial for semiconductor device performance.
  • Traditional methods may require specialized equipment or complex sample preparation.
  • Developing accessible techniques for defect imaging is an ongoing need.

Purpose of the Study:

  • To implement and evaluate the X-ray Beam Induced Current (XBIC) method using a laboratory X-ray source.
  • To assess the capability of XBIC for imaging silicon grain boundaries.
  • To correlate experimental XBIC results with simulations for parameter validation.

Main Methods:

  • Utilized a laboratory X-ray source coupled with polycapillary X-ray optics.
  • Applied the X-ray Beam Induced Current (XBIC) technique to silicon samples.
  • Performed simulations of Schottky diode images to estimate X-ray beam parameters.
  • Analyzed the contrast of grain boundaries in the obtained XBIC images.

Main Results:

  • Achieved good quality images of grain boundaries in silicon using the laboratory XBIC setup.
  • Successfully estimated X-ray beam parameters through Schottky diode image simulations.
  • Demonstrated a strong correlation between experimental and calculated grain boundary XBIC contrast.
  • Validated the feasibility of using a laboratory source for XBIC analysis.

Conclusions:

  • The laboratory X-ray source based XBIC method is a viable technique for imaging silicon grain boundaries.
  • Polycapillary optics enhance the resolution and applicability of XBIC.
  • The method offers a promising, accessible approach for material defect analysis.