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Updated: May 28, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
Electrochemical isothermal-capacitance-transient spectroscopy: a new depth profiling method of deep levels
1Center for Interdisciplinary Research, Tohoku University, Aoba 6-3, Aramaki, Sendai 980-8578, Japan.
Abstract:
The authors report on a new depth profiling method of deep levels, which we call electrochemical isothermal-capacitance-transient spectroscopy (EICTS). This is combined with electrochemical capacitance-voltage using the Schottky barrier of etchable electrolyte and isothermal-capacitance-transient spectroscopy using the capacitance-transient profile at a fixed temperature. We proved its validity by applying to the ZnSe:N epitaxial film of thickness of more than 1000 nm and comparing the characteristics of an obtained deep level with the results measured by conventional deep-level detection techniques. It is expected that EICTS is very effective to assess the deep levels of wide-bandgap semiconductors that suffer from various point defects and their complexes.
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