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Related Concept Videos

Preparation of Samples for Electron Microscopy01:20

Preparation of Samples for Electron Microscopy

To be visualized by an electron microscope, either transmission or scanning, biological samples need to be fixed (stabilized) so the electron beam does not destroy them and dried thoroughly (desiccated/dehydrated) so the vacuum does not affect them. Fixation needs to be done as quickly as possible because the sample properties will start changing as soon as it is removed from its natural environment. For example, in a tissue sample, the oxygen levels begin decreasing, causing an altered...

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Optimized Ar(+)-ion milling procedure for TEM cross-section sample preparation.

Levin Dieterle1, Benjamin Butz, Erich Müller

  • 1Karlsruhe Institute of Technology (KIT), Laboratorium für Elektronenmikroskopie, Engesserstraße 7, Gebäude 30.22, 76131 Karlsruhe, Germany. levin.dieterle@kit.edu

Ultramicroscopy
|October 8, 2011
PubMed
Summary
This summary is machine-generated.

Optimized transmission electron microscopy (TEM) sample preparation using argon ion (Ar(+)) milling is achieved through Monte Carlo simulations. This study introduces an alternating single-sector milling technique for high-quality TEM cross-sections.

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Area of Science:

  • Materials Science
  • Surface Science
  • Analytical Chemistry

Background:

  • High-quality samples are crucial for reliable transmission electron microscopy (TEM) investigations.
  • Optimizing sample preparation parameters, particularly for argon ion (Ar(+)) milling, is essential for achieving high-resolution TEM imaging.

Purpose of the Study:

  • To model topographical changes during Ar(+)-ion sputtering of symmetrical cross-section samples.
  • To predict optimized parameters for the final Ar(+)-ion milling preparation step.
  • To develop an improved sample preparation method for TEM.

Main Methods:

  • Two-dimensional Monte Carlo simulations were employed to model topographical changes during Ar(+)-ion sputtering.
  • Simulations utilized a modified parameterized description of the sputtering yield of Ar(+)-ions on silicon (Si).
  • Experimental validation involved systematic ion-milling studies (single-sector vs. double-sector) on Si and other material-science samples.

Main Results:

  • Simulations reproduced the commonly observed wedge-shaped profile in double-sector ion milling, independent of sputtering angle.
  • Simulations predicted the successful preparation of wide, plane-parallel sample areas using alternating single-sector ion milling.
  • Experimental validation confirmed the effectiveness of the alternating single-sector milling procedure.

Conclusions:

  • The presented systematic single-sector ion-milling procedure offers an effective method for preparing high-quality TEM cross-sections.
  • This technique is applicable to most Ar(+)-ion mills allowing simultaneous top and bottom milling.
  • The study highlights the importance of optimizing parameters like epoxy thickness and incident angle for topographical quality.