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Related Concept Videos

Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Updated: May 28, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

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Published on: April 12, 2018

Tuning surface charge property by floating gate field effect transistor.

Song Xue1, Ning Hu, Shizhi Qian

  • 1Institute of Micro/Nanotechnology, Old Dominion University, Norfolk, VA 23529, USA.

Journal of Colloid and Interface Science
|October 11, 2011
PubMed
Summary
This summary is machine-generated.

Floating gate field-effect transistors (FGFETs) offer a novel method for tuning surface charge properties. This new transistor design is superior to conventional field-effect transistors for controlling dielectric surface charges in aqueous solutions.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Electrochemistry

Background:

  • Surface charge properties of dielectric materials are crucial in various applications, including sensors and electrochemical devices.
  • Conventional field-effect transistors (FETs) have limitations in precisely tuning these surface properties, especially in aqueous environments.

Purpose of the Study:

  • To introduce and analyze a novel Floating Gate Field-Effect Transistor (FGFET) for the first time.
  • To demonstrate the superiority of FGFETs over conventional FETs for tuning the surface charge properties of dielectric materials.

Main Methods:

  • Fabrication of a novel FGFET architecture with an embedded floating gate electrode within the dielectric channel wall.
  • Analysis of the FGFET's performance in tuning the surface charge properties of dielectric materials in contact with aqueous solutions.

Main Results:

  • The FGFET successfully demonstrated the ability to tune surface charge properties.
  • The FGFET exhibited enhanced performance compared to conventional FETs in controlling surface charges.

Conclusions:

  • FGFETs represent a significant advancement for precisely controlling surface charge properties of dielectric materials.
  • This technology holds promise for improved performance in applications reliant on surface charge modulation.