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Memory and threshold resistance switching in Ni/NiO core-shell nanowires.
Li He1, Zhi-Min Liao, Han-Chun Wu
1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, People's Republic of China.
Nano Letters
|October 12, 2011
Summary
Researchers controlled memory and threshold resistance switching (RS) in Ni/NiO nanowires. Different compliance currents (I(CC)) determined switching type, offering insights for nonvolatile memory devices.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Resistance switching (RS) is crucial for nonvolatile memory devices.
- Understanding the mechanisms of different RS types is essential for device optimization.
Purpose of the Study:
- To achieve controlled alternation between memory and threshold resistance switching (RS) in single Ni/NiO core-shell nanowires.
- To elucidate the physical mechanisms underlying memory and threshold RS in these nanowires.
Main Methods:
- Controlled alternation of memory and threshold RS by adjusting compliance current (I(CC)) at room temperature.
- First-principles calculations to investigate the physical mechanisms.
- Analysis of oxygen vacancy (Vo) behavior and conductive filament formation.
Main Results:
- Memory RS triggered by high I(CC); threshold RS by low I(CC).
- Reset process achieved without setting I(CC).
- Memory RS attributed to oxygen vacancy chain formation; threshold RS to electric-field-induced breakdown without filament formation.
Conclusions:
- Oxygen vacancy migration and interactions are key to nonvolatile switching.
- Joule heating plays a critical role in filament formation and rupture.
- Findings provide guidelines for scaling, reliability, and reproducibility of NiO-based nonvolatile memory devices.
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