Related Experiment Video
Updated: May 28, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing
I Iñiguez-de-la-Torre1, J Mateos, Y Roelens
1Departamento de Física Aplicada, Universidad de Salamanca, Salamanca, Spain.
Abstract:
The understanding of the influence of surface charge effects on the electrical properties of nanostructures is a key aspect for the forthcoming generations of electronic devices. In this paper, by using an ultrafast electrical pulse characterization technique, we report on the room-temperature time response of a T-branch nanojunction which allows us to identify the signature of surface states. Different pulse widths from 500 ns to 100 µs were applied to the device. For a given pulse width, the stem voltage is measured and compared with the DC result. The output value in the stem is found to depend on the pulse width and to be related to the characteristic charging time of the interface states. As expected, the results show that the well-known nonlinear response of T-branch junctions is more pronounced for long pulses, beyond such a characteristic time.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction
Junction Potentials in Galvanic Cells
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

