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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Yanping Liu1, Wen Siang Lew, Li Sun
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
Weak localization in few-layer graphene becomes more pronounced with increasing layer count. This enhancement in negative resistance is attributed to suppressed corrugations and increased intervalley scattering in few-layer graphene materials.
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