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Related Concept Videos

π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0, resulting in...
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Diamagnetic Shielding of Nuclei: Local Diamagnetic Current

An applied magnetic field causes the electrons present in the molecule to circulate, setting up a local diamagnetic current within the molecule. The local diamagnetic current arising from circulating sigma-bonding electrons induces a magnetic field, Blocal that opposes the applied magnetic field, B0. The effective magnetic field experienced by these nuclei is given by the difference between the applied and local magnetic fields in a phenomenon called local diamagnetic shielding. Essentially,...
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IR Absorption Frequency: Delocalization

Electron delocalization refers to the distribution of electrons across multiple atoms within a molecule rather than being confined to a single atom or bond. This phenomenon is common in systems with conjugated bonds—structures where alternating single and double bonds allow π-electrons to move freely across the network. The movement of electrons stabilizes the molecule and can affect various chemical properties, including vibrational frequencies observed in IR spectroscopy.
In IR spectroscopy,...

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

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Published on: July 24, 2015

Enhanced weak localization effect in few-layer graphene.

Yanping Liu1, Wen Siang Lew, Li Sun

  • 1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.

Physical Chemistry Chemical Physics : PCCP
|October 14, 2011
PubMed
Summary
This summary is machine-generated.

Weak localization in few-layer graphene becomes more pronounced with increasing layer count. This enhancement in negative resistance is attributed to suppressed corrugations and increased intervalley scattering in few-layer graphene materials.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Weak anti-localization is observed in monolayer graphene, transitioning to weak localization in bilayer graphene.
  • Understanding magnetoresistance in few-layer graphene is crucial for electronic applications.

Purpose of the Study:

  • To investigate the weak localization correction to magnetoresistance in graphene structures with one to six layers.
  • To elucidate the role of layer number on magnetoresistance phenomena in few-layer graphene.

Main Methods:

  • Magnetoresistance measurements were performed on graphene samples with varying layer numbers (1-6 layers).
  • High magnetic field measurements were utilized to probe electronic properties.

Main Results:

  • A transition from weak anti-localization to weak localization was confirmed with increasing graphene layers.
  • The weak localization effect intensified with more layers, enhancing negative resistance.
  • Non-linear behavior in high magnetic fields indicated broken sub-lattice symmetry and excitonic gap formation.

Conclusions:

  • Few-layer graphene suppresses mesoscopic corrugations and increases intervalley scattering, restoring weak localization.
  • The findings provide insights into the electronic properties and potential applications of few-layer graphene.