Related Experiment Video
Updated: May 28, 2026
07:39
Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample
Hsiang-Chen Wang1, Xuan-Yu Yu, Yu-Lun Chueh
1Graduate Institute of Opto-Mechatronics, National Chung Cheng University 168 University Rd., Min-Hsiung, Chia-Yi 62102, Taiwan. hcwang@ccu.edu.tw
Optics Express
|October 15, 2011
Summary
Surface plasmon coupling in InGaN/GaN quantum wells enhances light emission by accelerating carrier recombination and suppressing surface recombination, leading to improved efficiency.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- InGaN/GaN multiple quantum wells (MQWs) are crucial for optoelectronic devices.
- Surface plasmon (SP) coupling is known to enhance light emission.
- Understanding carrier dynamics is key to optimizing device performance.
Purpose of the Study:
- To investigate carrier dynamics in InGaN/GaN MQWs with SP coupling.
- To elucidate the mechanisms behind SP-enhanced light emission.
- To quantify the impact of SP coupling on carrier recombination and diffusion.
Main Methods:
- Picosecond non-degenerate four-wave-mixing experiments.
- Temperature-dependent time-resolved photoluminescence (TRPL).
- Transient grating (TG) signal analysis to estimate carrier diffusion and surface recombination.
Main Results:
- Faster carrier decay observed in TRPL for SP-coupled samples, indicating enhanced recombination.
- Slower grating decay measured in four-wave-mixing for SP-coupled samples.
- Reduced carrier diffusion coefficients and surface recombination velocities above 150 K for SP-coupled samples.
Conclusions:
- SP coupling enhances light emission in InGaN/GaN MQWs through multiple pathways.
- Accelerated carrier recombination and suppressed surface recombination contribute to efficiency gains.
- SP coupling plays a significant role in improving the light emission efficiency of InGaN/GaN MQWs.
