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Quantum confinement effects in nanoscale-thickness InAs membranes
Kuniharu Takei1, Hui Fang, S Bala Kumar
1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Nano Letters
|October 20, 2011
Summary
Quantum confinement in indium arsenide (InAs) nanomembranes significantly impacts field-effect device properties. Thinner membranes show altered contact resistance and electron mobility due to quantum effects.
Area of Science:
- Semiconductor physics
- Materials science
- Nanotechnology
Background:
- Nanoscale semiconductor properties are governed by size effects.
- Quantum confinement profoundly influences electronic and optical characteristics.
Purpose of the Study:
- Investigate quantum confinement's role in free-standing InAs nanomembranes (5-50 nm thick).
- Analyze field-effect device properties, contact resistance, and electron mobility.
Main Methods:
- Optical absorption spectroscopy to visualize quantized sub-bands.
- Fabrication of InAs nanomembranes on transparent substrates.
- Electrical characterization of field-effect devices.
Main Results:
- Direct visualization of quantized sub-bands via optical absorption.
- Contact resistance correlates with available quantum transport modes.
- Anomalous field and thickness-dependent electron mobility observed.
Conclusions:
- Quantum confinement dictates InAs nanomembrane device physics.
- Observed behaviors deviate from conventional MOSFET models.
- Advances understanding of two-dimensional semiconductor device physics.
