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Updated: May 28, 2026
Microfluidic Chips for In Situ Crystal X-ray Diffraction and In Situ Dynamic Light Scattering for Serial Crystallography
Published on: April 24, 2018
Polarization-dependent X-ray six-beam pinhole topographs for a channel-cut silicon crystal
Kouhei Okitsu1, Yoshitaka Yoda, Yasuhiko Imai
1Nano-Engineering Research Center, Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Tokyo 113-8656, Japan. okitsu@soyak.t.u-tokyo.ac.jp
Abstract:
It was pointed out in a previous paper [Okitsu et al. (2006), Acta Cryst. A62, 237-244] that an n-beam Takagi-Taupin (T-T) equation can be solved for a crystal of arbitrary shape. The procedure to integrate the n-beam T-T equation is to let all the Fourier coefficients of the electric susceptibility be zero at positions inside the Borrmann pyramid but outside the crystal. The efficiency of this simple procedure is verified in the present paper by showing qualitative and quantitative agreements between experimentally obtained and computer-simulated X-ray six-beam pinhole topographs for a channel-cut silicon crystal.
