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Metallic Solids

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability. Many...

Network Covalent Solids

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...

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Updated: May 28, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

Robust, functional nanocrystal solids by infilling with atomic layer deposition.

Yao Liu¹, Markelle Gibbs, Craig L Perkins

¹Department of Chemistry and Center for Advanced Solar Photophysics, University of California, Irvine, Irvine, California 92697, United States.

|October 26, 2011

Summary

This summary is machine-generated.

Protecting semiconductor nanocrystal (NC) films from degradation is key for electronic devices. Atomic layer deposition (ALD) infills NCs with metal oxides, enhancing stability and performance in air for months.

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Area of Science:

Materials Science
Nanotechnology
Solid-State Physics

Background:

Colloidal semiconductor nanocrystal (NC) thin films are prone to degradation due to high surface area and energy.
Device fabrication requires preventing oxidation, diffusion, ripening, and sintering of NCs.
Protecting NCs is crucial for the stability and longevity of NC-based electronic devices.

Purpose of the Study:

To develop a method for protecting colloidal semiconductor nanocrystal solids from degradation.
To enhance the stability and performance of NC-based electronic devices.
To investigate the effect of metal oxide infilling on NC film properties and device performance.

Main Methods:

Utilized low-temperature atomic layer deposition (ALD) to infill conductive lead selenide (PbSe) NC solids with metal oxides.
Fabricated inorganic nanocomposites by locking NCs in place with metal oxides.
Incorporated ALD-infilled NCs into field-effect transistors and solar cells.

Main Results:

ALD infilling with amorphous alumina protected NC devices, yielding enhanced and stable performance in air for months.
ALD infilling with zinc oxide (ZnO) reduced the inter-NC tunnel barrier height for electron transport.
Achieved electron mobilities of 1 cm² V⁻¹ s⁻¹ in PbSe NC films.

Conclusions:

ALD infilling is a versatile technique for creating robust NC solids for optoelectronic applications.
The developed method effectively prevents oxidative and photothermal damage in NC films.
This approach enables the fabrication of stable and high-performance NC-based electronic devices.