Related Experiment Video
Updated: May 28, 2026

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays
Published on: April 15, 2013
Self-filtering oscillations in carbon nanotube hetero-junctions
F Scarpa1, J W Narojczyk, K W Wojciechowski
1Bristol Centre for Nanoscience and Quantum Information, University of Bristol, BS8 1UJ Bristol, UK. f.scarpa@bris.ac.uk
Abstract:
We evaluate the vibrational properties of single-wall carbon nanotube (SWCNT) hetero-junction (HJ) oscillators using a hybrid atomistic-continuum approach validated by molecular mechanics/molecular dynamics simulations. The SWCNT-HJs show a broken symmetry topology of their mode shapes, with striction effects caused on the bending and radial modes by the combined effect of the HJ and the tube with the thinner radius. The single-wall nanotube HJs also show selective mass sensing properties based solely on the geometry and type of the boundary conditions of the specific nanostructure. This unusual behaviour has not been observed so far in classical SWCNT systems.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Oscillations In An LC Circuit
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
¹³C NMR: ¹H–¹³C Decoupling
A broadband decoupling technique is used to simplify these complex, sometimes overlapping, signals. Broadband decoupling relies on a...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

