Double Resonance Techniques: Overview
The Electrical Double Layer
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
1Department of Physics, South China University of Technology, Guangzhou 510641, People's Republic of China. rzhu@scut.edu.cn
Quantum pumping in graphene double-barrier structures generates significant quantum noise. This noise dramatically increases when the current direction reverses, revealing the Klein paradox effect.
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