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Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform
D J Arenas1, Dongha Shim, D I Koukis
1Department of Physics, University of North Florida, Jacksonville, Florida 32254, USA.
The Review of Scientific Instruments
|November 4, 2011
Summary
Optical methods effectively measure high-frequency oscillator circuits (400-600 GHz). This technique characterizes fundamental and harmonic emissions, showing potential for spectroscopy applications.
Area of Science:
- Physics
- Electrical Engineering
- Spectroscopy
Background:
- Oscillator circuits operating at millimeter-wave frequencies (400-600 GHz) present measurement challenges.
- Characterizing the emission spectra of these high-frequency circuits is crucial for performance evaluation and application development.
Purpose of the Study:
- To describe and validate optical methods for measuring the emission spectra of oscillator circuits in the 400-600 GHz range.
- To demonstrate the utility of Fourier-transform interferometric spectroscopy for characterizing these advanced circuits.
Main Methods:
- Placing oscillator circuits with integrated patch antennas into the source chamber of a Fourier-transform interferometric spectrometer.
- Measuring emitted power using two methods: direct detection with a calibrated bolometer and comparison against blackbody radiation sources.
Main Results:
- The optical technique successfully measured emission spectra for circuits operating at the frontier of high frequencies.
- The method allowed for characterization of both fundamental and harmonic power outputs.
- Circuits demonstrated higher emission than blackbody sources at operating frequencies.
Conclusions:
- Optical measurement is a valuable technique for characterizing high-frequency oscillator circuits.
- The ability to measure fundamental and harmonic emissions is critical for specific oscillator designs.
- The observed supra-blackbody emission suggests potential applications in spectroscopy.
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