Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ampere-Maxwell's Law: Problem-Solving01:17

Ampere-Maxwell's Law: Problem-Solving

A parallel-plate capacitor with capacitance C, whose plates have area A and separation distance d, is connected to a resistor R and a battery of voltage V. The current starts to flow at t = 0. What is the displacement current between the capacitor plates at time t? From the properties of the capacitor, what is the corresponding real current?
To solve the problem, we can use the equations from the analysis of an RC circuit and Maxwell's version of Ampère's law.
For the first part of the problem,...
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Tuning Quintet Multiexciton Sublevel Selection via Bridge Resonance in Singlet Fission.

The journal of physical chemistry letters·2026
Same author

Radiofrequency cascade readout of coupled spin qubits.

Nature electronics·2026
Same author

Tantalum alloy-based resonators for quantum information systems.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Between the Nanosheets: Enhancing Electron-Hole Exchange Interaction for Room-Temperature Magneto-Photoluminescence in Liquid-phase-exfoliated 2D Perovskite.

ACS nano·2025
Same author

Versatile High-Sensitivity EPR Using Superconducting Spiral Microresonators.

Small methods·2025
Same author

Room-Temperature Optically Detected Coherent Control of Molecular Spins.

Physical review letters·2024
Same journal

Daily briefing: 'Cyborg' cockroaches breathe underwater with printed suit.

Nature·2026
Same journal

China boosts prestigious grants for young scientists - will it ease competition?

Nature·2026
Same journal

Incoming US science academy chief vows to 'double down' on research.

Nature·2026
Same journal

Author Correction: Synthesis of enantioenriched atropisomers by biocatalytic deracemization.

Nature·2026
Same journal

Electrodeposited self-assembled molecules for perovskite photovoltaics.

Nature·2026
Same journal

Neutrino's nursery found: the 'Shadow Blaster'.

Nature·2026
See all related articles

Related Experiment Video

Updated: May 22, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Embracing the quantum limit in silicon computing.

John J L Morton1, Dane R McCamey, Mark A Eriksson

  • 1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. john.morton@sjc.ox.ac.uk

Nature
|November 19, 2011
PubMed
Summary
This summary is machine-generated.

Silicon shows great promise for building quantum computers, leveraging quantum mechanics for enhanced performance in areas like cryptography and scientific simulation. Its properties make it a superior platform for this next generation of computing technology.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: May 22, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

  • Quantum computing and information science.
  • Solid-state physics and materials science.

Background:

  • Quantum computers offer significant performance gains for diverse applications, including cryptography, databases, and scientific simulations.
  • Quantum mechanical phenomena, while limiting conventional device scaling, are fundamental to quantum computing.
  • Silicon is a key material in conventional computing and possesses advantageous properties for quantum computing.

Purpose of the Study:

  • To explore the potential of silicon as a platform for building quantum computers.
  • To highlight the unique requirements of quantum computing compared to classical computing.
  • To identify how silicon's properties align with these quantum computing requirements.

Main Methods:

  • Review of quantum mechanical phenomena relevant to computation.
  • Analysis of silicon's material properties in the context of quantum information processing.
  • Comparison of quantum computing requirements with silicon's characteristics.

Main Results:

  • Silicon exhibits properties that make it exceptionally suitable for constructing quantum computing systems.
  • The unique demands of quantum computation can be met by silicon-based architectures.
  • Silicon offers a viable and promising pathway for realizing advanced quantum computing capabilities.

Conclusions:

  • Silicon is a leading candidate material for the development of practical quantum computers.
  • Further research into silicon-based quantum technologies is warranted.
  • The transition to silicon-based quantum computing could revolutionize multiple scientific and technological fields.