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Related Experiment Video

Updated: May 27, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

SiGe epitaxy on a 300 mm batch furnace.

Andreas Naumann¹, Jonas Sundqvist, Marcel Ogiewa

¹Fraunhofer-Center Nanoelektronische Technologien, Königsbrücker Str. 180, 01099 Dresden, Germany.

Journal of Nanoscience and Nanotechnology

|November 22, 2011

Summary

This study demonstrates cost-effective silicon and silicon germanium epitaxy in a batch furnace, enabling high-volume manufacturing. The process ensures excellent crystalline quality and uniformity for advanced applications.

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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Published on: October 23, 2018

Area of Science:

Materials Science
Semiconductor Manufacturing

Background:

High-volume manufacturing (HVM) of silicon and silicon germanium (SiGe) requires cost-effective epitaxy processes.
Existing methods may face limitations in scalability and cost-efficiency for 300 mm wafer production.

Purpose of the Study:

To report the feasibility of Si and SiGe epitaxy using a specific batch furnace reactor.
To demonstrate a scalable and cost-effective approach for 300 mm HVM.

Main Methods:

Utilized an ASM A412(TMa) LPCVD hot wall vertical batch furnace reactor.
Employed wet chemical cleaning and in-situ hydrogen anneal for substrate preparation.
Grew epitaxial layers using silane and germane.

Main Results:

Achieved feasibility for Si and SiGe epitaxy with 100 wafer loads, adaptable for 25 and 200 wafer loads.
Confirmed excellent crystalline quality, layer thickness, and SiGe stoichiometry uniformity via ToFSIMS, XRD, Raman, AFM, and TEM.
Significant cost reduction potential for 300 mm HVM.

Conclusions:

The demonstrated epitaxy process is feasible and adaptable for various wafer load sizes.
This approach offers a significant cost reduction for 300 mm epitaxy in HVM.
Enables new applications through cost-effective, high-quality Si and SiGe layer deposition.