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Published on: June 25, 2020
One dimensional aluminum nitride nanostructures: synthesis, structural, and luminescence properties
S H Mousavi1, M A Gharavi, H Haratizadeh
1Physics Department, Shahrood University of Technology, Shahrood, 3619995161, Iran.
Journal of Nanoscience and Nanotechnology
|November 22, 2011
Summary
Researchers grew high-purity aluminum nitride (AlN) nanostructures using direct nitridation. These AlN nanostructures exhibit intense visible light emission at room temperature, showcasing promising optical properties for semiconductor applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Aluminum nitride (AlN) is a wide bandgap semiconductor with unique optical and electronic properties.
- Its large bandgap (6.1 eV) makes it suitable for high-frequency and high-power electronic devices.
- Exploring AlN nanostructures is crucial for advancing optoelectronic applications.
Purpose of the Study:
- To investigate the growth and optical properties of aluminum nitride (AlN) nanostructures.
- To demonstrate the synthesis of AlN nanostructures with varying widths via direct nitridation.
- To characterize the purity and luminescence of the synthesized AlN nanostructures.
Main Methods:
- Direct nitridation of aluminum using nitrogen (N2) gas flow via chemical vapor deposition (CVD).
- Analysis using scanning electron microscopy (SEM) for morphology and energy-dispersive X-ray (EDX) spectroscopy for elemental composition.
- Photoluminescence (PL) spectroscopy with a 325-nm He-Cd laser for optical property evaluation.
Main Results:
- Successfully synthesized AlN nanostructures, including ultrathin to thick nanowires, with high purity confirmed by EDX.
- Observed high-intensity light emission in the visible spectrum from the AlN nanostructures at room temperature.
- Demonstrated the effectiveness of direct nitridation CVD for producing high-quality AlN nanostructures.
Conclusions:
- Direct nitridation via CVD is an effective method for synthesizing pure AlN nanostructures.
- The synthesized AlN nanostructures exhibit significant visible photoluminescence at room temperature.
- These findings highlight the potential of AlN nanostructures in optoelectronic devices.
