Low temperature SiC film deposition using trichlorosilane gas and monomethylsilane gas

In order to produce silicon carbide thin film through the process entirely at low temperatures, silicon carbide chemical vapor deposition on a silicon wafer surface was performed using trichlorosilane gas and monomethylsilane gas. First, the silicon thin film was formed using trichlorosilane gas at 800 degrees C and was cooled to room temperature in ambient hydrogen, in order to produce hydrogen-terminated silicon surface. Next, monomethylsilane gas was introduced at room temperature to produce silicon carbide thin film. The mirror-like appearance of the film obtained by this process was maintained after the exposure to hydrogen chloride gas at 800 degrees C. Furthermore, very thin Si-C layer was detected at the surface by means of the time-of-flight secondary ion mass spectrometry. Thus, the silicon carbide thin film was concluded to be formed through the process at temperatures below 800 degrees C.