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Carburization of Si microwires by chemical vapour deposition
M Ollivier1, L Latu-Romain, A Mantoux
1Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France.
Abstract:
We report the elaboration of silicon carbide (SiC) nanostructures thanks to the carburization of silicon microwires (MWs) under methane at high temperature. The produced SiC nanostructures display a tubular shape and are polycrystalline. The as-prepared silicon carbide microtubes (MTs) were characterized and studied by scanning electron microscopy (SEM), dual focused ion beam-scanning electron microscope (FIB-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy. The formation of microtubes can be explained by the out-diffusion of Si through the SiC during the carburization process.

