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Carrier Transport

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:

Transport Number

Transport Number

The transport number is the fraction of the total current carried by an ion in an electrolyte solution. It is defined as the ratio of the current carried by a specific ion to the total current flowing through the solution. The transport number, t, is central to understanding ionic mobility, which describes how fast an ion moves under the influence of an electric field. This link connects the physical behavior of ions in solution to the chemical processes that occur during electrochemical...

Electrical Transport

Electrical Transport

The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...

Secondary Active Transport

Secondary Active Transport

One example of how cells use the energy contained in electrochemical gradients is demonstrated by glucose transport into cells. The ion vital to this process is sodium (Na+), which is typically present in higher concentrations extracellularly than in the cytosol. Such a concentration difference is due, in part, to the action of an enzyme "pump" embedded in the cellular membrane that actively expels Na+ from a cell. Importantly, as this pump contributes to the high concentration of...

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Related Experiment Video

Updated: May 27, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Atomic-scale transport in epitaxial graphene.

Shuai-Hua Ji, J B Hannon, R M Tromp

Nature Materials

|November 22, 2011

Summary

High carrier mobility in graphene is crucial for devices. Atomic-scale measurements reveal that surface steps and layer thickness variations on SiC substrates significantly degrade graphene performance, hindering device applications.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene's high carrier mobility is vital for advanced electronic devices.
Mobility in substrate-supported graphene is significantly lower than in free-standing films.
Identifying mobility degradation factors is a key challenge in graphene research.

Discussion:

This study employs model-independent, atomic-scale transport measurements to investigate carrier scattering in epitaxial graphene on SiC.
The research directly probes the impact of specific atomic-scale defects on charge transport.
It moves beyond indirect experimental methods that rely on theoretical scattering models.

Key Insights:

Surface steps and variations in graphene layer thickness on SiC substrates are identified as major scattering centers.

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These atomic-scale defects significantly degrade carrier mobility in epitaxial graphene.

Substrate topography at the atomic level critically influences graphene's electronic performance.

Outlook:

Understanding these defect-induced scattering mechanisms is essential for fabricating high-performance graphene devices.
Strategies to mitigate scattering from substrate features can lead to improved graphene-based electronics.
Further research into atomic-scale defect engineering could unlock graphene's full potential.