Controlled growth of related defects on oxide nanowires

This study analyzed correlations between semiconducting properties and defects in oxide nanowires by changing the growth temperature and adding a reducing agent. Oxide nanowires each showed different emission spectra and semiconducting properties depending on growth factors caused by structural/intrinsic defects on the surface of the oxide nanowires. In particular, the substrate temperature played a key role in controlling defects during nanowire growth, and defects were reduced more effectively by adding a reducing agent to the source material. Oxide nanowires with reduced defects showed transistor characteristics with an on-current 2.5 times higher and a mobility 3 times higher than as-grown nanowires.