Controlling of the electrical resistivity of GaN layer using AIN nucleation layer

The sheet resistance (Rs) of undoped GaN films on AIN/c-plane sapphire substrate was investigated. The Rs was strongly dependent on the AIN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using X-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AIN nucleation layer (NL) and was gradually relaxed as increasing AIN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AIN layer condition, which was originated by the crossover from planar to island grains of AIN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.