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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Debye–Huckel–Onsager Conductance Equation01:28

Debye–Huckel–Onsager Conductance Equation

The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect. According to this equation,...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Electric Field at the Surface of a Conductor01:26

Electric Field at the Surface of a Conductor

Consider a conductor in electrostatic equilibrium. The net electric field inside a conductor vanishes, and extra charges on the conductor reside on its outer surface, regardless of where they originate.
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Electrically tunable macroscopic quantum tunneling in a graphene-based Josephson junction.

Gil-Ho Lee1, Dongchan Jeong, Jae-Hyun Choi

  • 1Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea.

Physical Review Letters
|November 24, 2011
PubMed
Summary

This study reveals quantum tunneling in graphene Josephson junctions, showing gate voltage control over quantum effects for potential superconducting quantum bit applications.

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Published on: January 19, 2018

Area of Science:

  • Condensed Matter Physics
  • Quantum Phenomena
  • Materials Science

Background:

  • Josephson junctions are crucial for superconducting electronics.
  • Understanding quantum effects in these devices is key for advancing quantum technologies.
  • Graphene-based Josephson junctions offer tunable properties.

Purpose of the Study:

  • To investigate the stochastic switching-current distribution in graphene-based Josephson junctions.
  • To explore the transition from classical to quantum regimes.
  • To assess the potential of these junctions for quantum computing applications.

Main Methods:

  • Experimental measurements of stochastic switching-current distribution.
  • Microwave spectroscopy to probe energy levels.
  • Analysis of gate voltage control over quantum phenomena.

Main Results:

  • Observed a crossover from classical to quantum behavior in Josephson junctions.
  • Demonstrated macroscopic quantum tunneling of the Josephson phase particle at low temperatures.
  • Identified multiphoton absorption via discrete energy levels in the washboard potential.

Conclusions:

  • Gate voltage effectively controls the crossover temperature for macroscopic quantum tunneling.
  • Gate voltage also tunes the quantized level spacing, crucial for quantum applications.
  • Graphene Josephson junctions show promise for developing gate-tunable superconducting quantum bits.